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NTHD2110T
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V (Br)DSS
V GS = 0 V dc , I D = -250 m A
-12
V
Zero Gate Voltage Drain Current
I DSS
V DS = -12 V,
V GS = 0 V
T J = 25 ° C
T J = 85 ° C
-1.0
-5.0
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = " 8.0 V
" 0.1
m A
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Drain-to-Source On-Resistance
V GS(th)
R DS(on)
V DS = V GS , I D = -250 m A
V GS = -4.5 V, I D = -6.4 A
-0.40
33
-0.85
40
V
m W
V GS = -2.5 V, I D = -2.0 A
V GS = -1.8 V, I D = -1.7 A
42
57
53
80
Forward Transconductance
g FS
V DS = -5.0 V, I D = -6.4 A
13.7
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1072
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = -6.0 V, V GS = 0 V
f = 1.0 MHz
260
134
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = -4.5 V, V DS = -6.0 V,
I D = -6.4 A
10.5
0.6
1.3
2.8
14
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V DD = -6.0 V, V GS = -4.5 V,
I D = -1.0 A, R G = 6.0 W
7.5
8.6
99.7
49.8
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V SD
I S = -1.7 A,
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
-0.7
-0.6
-1.0
V
Reverse Recovery Time
Reverse Recovery Charge
t RR
Q RR
V GS = 0 V,
dI S / dt = 100 A/ m s, I S = -1.7 A
V GS = 0 V,
dI S / dt = 100 A/ m s, I S = -1.7 A
41.7
22
ns
nC
4.
5.
6.
7.
Surface Mounted on FR4 board using 1 in sq size (Cu area = 1.127 in sq [1 oz] included traces).
Surface mounted on FR4 board using the minimum recommended pad size.
Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
Switching characteristics are independent of operating junction temperatures.
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